Details

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BUY VND5E006A https://www.utsource.net/itm/p/5383030.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source On-State Resistance	RDS(on)	-	5.5	-	mΩ @ VGS=10V, ID=6A	On-state resistance
Continuous Drain Current	ID	-	-	6	A	Continuous drain current at TC = 25°C
Pulse Drain Current	IDM	-	-	30	A	Pulse drain current (tP = 10ms, duty cycle 1%)
Gate Threshold Voltage	VGS(th)	1.0	1.5	2.5	V	Gate threshold voltage
Total Power Dissipation	PD	-	-	40	W	Total power dissipation at TC = 25°C
Junction Temperature	TJ	-25	-	175	°C	Operating junction temperature range
Storage Temperature Range	TSTG	-55	-	150	°C	Storage temperature range

Instructions for VND5E006A:

1. Handling Precautions: The device is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
2. Mounting: Ensure proper heat sinking if operating near maximum current or power ratings to maintain the junction temperature within specified limits.
3. Gate Drive: Apply a gate-source voltage (VGS) of at least 10V to ensure the MOSFET is fully enhanced and operates with minimal on-resistance.
4. Current Limitation: Do not exceed the continuous drain current (ID) or pulse drain current (IDM) ratings to prevent damage.
5. Temperature Monitoring: Monitor the junction temperature (TJ) to ensure it remains within the operational range (-25°C to 175°C).
6. Storage Conditions: Store the device in an environment that maintains temperatures between -55°C and 150°C.
7. Soldering: Follow recommended soldering profiles to avoid thermal shock and potential damage to the device.

(For reference only)