Details

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BUY W25X40BVSSIG https://www.utsource.net/itm/p/5388115.html
1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Supply Voltage	Vcc	2.7	-	3.6	V
Standby Current	ISB	-	1	5	μA	@ Vcc = 3.0V, Ta = 25°C
Active Current	IAV	-	15	25	mA	@ Vcc = 3.0V, Ta = 25°C
Programming Current	IPROG	-	1	2	mA	@ Vcc = 3.0V, Ta = 25°C
Erase Time (Sector)	tERS	-	200	300	ms	@ Vcc = 3.0V, Ta = 25°C
Programming Time (Page)	tPROG	-	2	5	ms	@ Vcc = 3.0V, Ta = 25°C
Read Access Time	tACC	0	0.1	0.2	μs	@ Vcc = 3.0V, Ta = 25°C
Data Retention	-	-	-	20	years	@ Vcc = 3.0V, Ta = 25°C
Operating Temperature	Ta	-40	-	85	°C
Storage Temperature	Tstg	-65	-	150	°C
Write Protect Pin (WP)	-	-	-	-	High-Z, Low	Active Low
Chip Select Pin (CS)	-	-	-	-	High-Z, Low	Active Low
Hold Pin (HOLD)	-	-	-	-	High-Z, Low	Active Low
Write Enable Pin (WEL)	-	-	-	-	High-Z, Low	Active High

Instructions:

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the range of 2.7V to 3.6V.
   • The device operates optimally at 3.0V.

2. Current Consumption:

   • The standby current (ISB) should be monitored to ensure it does not exceed 5μA.
   • The active current (IAV) can reach up to 25mA during operation.
   • The programming current (IPROG) should be kept between 1mA and 2mA.

3. Timing Parameters:

   • Sector erase time (tERS) can take between 200ms and 300ms.
   • Page programming time (tPROG) ranges from 2ms to 5ms.
   • Read access time (tACC) is typically 0.1μs to 0.2μs.

4. Temperature:

   • The operating temperature (Ta) should be between -40°C and 85°C.
   • The storage temperature (Tstg) can range from -65°C to 150°C.

5. Pin Functions:

   • Write Protect (WP): Set to low to enable write protection.
   • Chip Select (CS): Set to low to select the device.
   • Hold (HOLD): Set to low to pause ongoing operations.
   • Write Enable (WEL): Set to high to enable write operations.

6. Data Retention:

   • The device retains data for up to 20 years under typical operating conditions.

7. Programming and Erasing:

   • Use the appropriate commands for sector erasing and page programming as specified in the datasheet.
   • Ensure proper timing and current levels during these operations to avoid data corruption.

8. Handling:

   • Handle the device with care to avoid static damage.
   • Follow recommended soldering and mounting procedures to ensure reliable performance.

(For reference only)