Details

---

BUY MX25L12835FM2I-10G https://www.utsource.net/itm/p/5448760.html

Parameter	Description	Value	Unit
Device	Device Name	MX25L12835FM2I-10G	-
Manufacturer	Manufacturer	Macronix	-
Memory Type	Memory Type	SPI NOR Flash	-
Density	Memory Density	128 Mbit	-
Organization	Memory Organization	16M x 8, 8M x 16	-
Voltage (Vcc)	Operating Voltage	2.7 to 3.6	V
Voltage (VccIO)	I/O Voltage	1.65 to 3.6	V
Standby Current	Standby Current (Typical)	1.0	μA
Active Current	Active Current (Typical)	3.0	mA
Programming Current	Programming Current (Typical)	4.0	mA
Erase Current	Erase Current (Typical)	10.0	mA
Read Time	Read Access Time (Typical)	45	ns
Page Program Time	Page Program Time (Maximum)	3.0	ms
Sector Erase Time	Sector Erase Time (Maximum)	300	ms
Bulk Erase Time	Bulk Erase Time (Maximum)	40	s
Endurance	Endurance (Program/Erase Cycles)	100,000	-
Data Retention	Data Retention	20 years	-
Operating Temperature	Operating Temperature Range	-40 to +85	°C
Storage Temperature	Storage Temperature Range	-65 to +150	°C
Package	Package Type	WSON-8	-
Pin Count	Pin Count	8	-

Instructions for Use

1. Power Supply:

   • Ensure that the Vcc and VccIO voltages are within the specified ranges.
   • Vcc should be between 2.7V and 3.6V.
   • VccIO should be between 1.65V and 3.6V.

2. Pin Configuration:

   • CS# (Chip Select): Low to activate the device.
   • SCK (Serial Clock): Provides the clock signal for communication.
   • SI (Serial Input): Data input line.
   • SO (Serial Output): Data output line.
   • WP# (Write Protect): High to enable write operations, low to protect against writes.
   • HOLD# (Hold): Low to pause ongoing operations.
   • Vcc: Power supply.
   • GND: Ground.

3. Initialization:

   • Apply power to the device.
   • Set CS# to high to ensure the device is not selected.
   • Configure the serial clock (SCK) and data lines (SI, SO) according to your system requirements.

4. Communication Protocol:

   • Use the standard SPI protocol for communication.
   • Send commands to the device by setting CS# low, then sending the command byte followed by any required data bytes.
   • The device will respond with the appropriate data or status information.

5. Commands:

   • Read Status Register (05h): Reads the status register.
   • Write Enable (06h): Enables write operations.
   • Write Disable (04h): Disables write operations.
   • Read Data (03h): Reads data from the memory.
   • Page Program (02h): Programs a page of data.
   • Sector Erase (20h): Erases a sector of memory.
   • Bulk Erase (60h): Erases the entire memory.
   • Deep Power-Down (B9h): Enters deep power-down mode.
   • Release from Deep Power-Down (ABh): Exits deep power-down mode.

6. Timing Considerations:

   • Ensure that the read access time, page program time, sector erase time, and bulk erase time are respected to avoid data corruption.
   • Use the status register to check the readiness of the device after write or erase operations.

7. Handling:

   • Handle the device with care to avoid static discharge.
   • Store the device in a temperature-controlled environment within the specified storage temperature range.

8. Endurance and Data Retention:

   • The device is rated for 100,000 program/erase cycles.
   • Data retention is guaranteed for 20 years under normal operating conditions.

(For reference only)