Details

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BUY MT29F16G08CBACAWP-IT https://www.utsource.net/itm/p/5841809.html

Parameter	Description	Value
Product Name	NAND Flash Memory	MT29F16G08CBACAWP-IT
Memory Size	Total memory size	16 Gb (2 Gbytes)
Organization	Memory organization	8192 Blocks x 64 Pages x 2112 Bytes
Interface	Interface type	Toggle Mode / ONFi 3.0
Package Type	Package form factor	WFBGA (Wafer-Level Fan-Out Ball Grid Array)
Number of Balls	Number of balls in package	96
Ball Pitch	Distance between the centers of adjacent balls	0.5 mm
Operating Voltage (Vcc)	Supply voltage range	1.7 V to 1.95 V
Operating Temperature	Operating temperature range	-40°C to +85°C
Data Retention	Data retention time	10 years
Endurance	Program/Erase cycles per block	Up to 3,000 cycles
Read Disturb Endurance	Read operations before a refresh is required	100,000 read cycles
ECC Requirement	Error Correction Code requirement	1 bit/512 bytes
Page Size	Page size	2112 Bytes (2048 Bytes data + 64 Bytes spare)
Block Size	Block size	131072 Bytes
Program Time	Maximum page program time	600 μs
Erase Time	Maximum block erase time	2 ms
Read Time	Random read access time	25 μs

Instructions:

1. Initialization: Ensure the device is properly initialized according to the ONFi or Toggle Mode protocol specifications.
2. Power Supply: Use a stable power supply within the specified operating voltage range (1.7 V to 1.95 V).
3. Temperature Considerations: Operate the device within the specified temperature range (-40°C to +85°C) for reliable performance.
4. Programming and Erasing: Adhere to the endurance specifications; do not exceed 3,000 program/erase cycles per block.
5. Error Correction: Implement an ECC mechanism that can correct at least 1 bit error per 512 bytes of data.
6. Handling Static: Handle the device with care to avoid damage from electrostatic discharge (ESD).
7. Storage Conditions: Store the device in a dry environment when not in use to prevent moisture damage.

(For reference only)