Details

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BUY MT46V16M16-5BF https://www.utsource.net/itm/p/6085308.html

Parameter	Description	Value	Unit
Product Name	High Density Synchronous DRAM	MT46V16M16-5BF	-
Memory Organization	Data Width x Row Address Bits x Column Address Bits x Banks	16M x 16	bits
Supply Voltage (Vcc)	Operating voltage for the core logic	2.5	V
Supply Voltage I/O (Vccq)	Operating voltage for I/O	2.5 or 3.3	V
Access Time (tAC)	Access time from clock	5.0	ns
Cycle Time (tCK)	Minimum cycle time	5.0	ns
CAS Latency (CL)	Number of clock cycles between the issuance of a read command and data output	3	clocks
Package Type	Packaging type	BGA	-
Operating Temperature	Range of operating temperatures	-40 to +85	°C

Instructions:

1. Power Supply Requirements: Ensure that the supply voltages Vcc and Vccq are within specified limits before applying power to the device.
2. Initialization Sequence: After applying power, perform an initialization sequence as per the datasheet guidelines to configure the DRAM properly.
3. Clock Management: Use a stable clock source to avoid timing violations. The device supports a minimum cycle time of 5.0 ns.
4. Address and Command Inputs: Provide address and command inputs synchronized with the clock signal. Ensure correct timing for reliable operation.
5. Data Input/Output Handling: Manage data input/output carefully, ensuring that read and write operations respect the access times and CAS latency.
6. Thermal Considerations: Operate within the specified temperature range to maintain performance and reliability. Implement adequate cooling if necessary.
7. Storage Conditions: When not in use, store the device in conditions that do not exceed the maximum non-operating storage temperature.

For detailed specifications and advanced configurations, refer to the manufacturer’s datasheet.

(For reference only)