Details

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BUY AT28HC256-70PI https://www.utsource.net/itm/p/6175055.html
256 (32kx8) High-speed Parallel EePROM

Parameter	Description	Value
Device Type	Non-Volatile Flash Memory	-
Memory Size	32K x 8-bit (256 Kbit)	-
Package	28-Pin Plastic DIP (PI)	-
Operating Voltage (Vcc)	Supply Voltage Range	2.7V to 5.5V
Standby Current (Typical)	Quiescent Current at Vcc = 5V	1 μA
Active Current (Typical)	Active Current at Vcc = 5V	10 mA
Programming Voltage (Vpp)	Programming Voltage	12.5V ± 0.5V
Programming Time	Typical Time for Programming a Byte	4 ms
Erase Time	Typical Time for Erasing a Sector	1 s
Write Cycles	Endurance	1,000,000 cycles
Data Retention	Minimum Data Retention Time	10 years
Operating Temperature Range	Industrial Grade	-40°C to +85°C
Storage Temperature Range	-65°C to +150°C
Access Time	Typical Access Time at Vcc = 5V	70 ns
Input/Output Voltage (VIH/VIL)	High-Level Input Voltage / Low-Level Input Voltage	VIH: 2.0V to Vcc, VIL: 0V to 0.8V
Output Drive Capability	Output Current per Pin	±10 mA
Pin Configuration	-	-

Instructions for Use

1. Power Supply:

   • Connect the Vcc pin to the supply voltage (2.7V to 5.5V).
   • Connect the Vss pin to ground (0V).

2. Programming:

   • Apply the programming voltage (Vpp) to the appropriate pin.
   • Use the write enable (WE) and output enable (OE) pins to control data input and output.
   • Program data by writing to the desired memory address.

3. Erasing:

   • Apply the erase voltage to the chip to erase all sectors or specific sectors as needed.
   • Ensure the chip is not powered during the erase process to avoid damage.

4. Reading:

   • Apply the read voltage (Vcc) to the chip.
   • Use the address lines to select the desired memory location.
   • The data will be available on the data output lines when the output enable (OE) is active.

5. Handling:

   • Handle the device with care to avoid static discharge.
   • Store the device in a dry, cool environment to ensure long-term reliability.

6. Temperature Considerations:

   • Ensure the operating temperature is within the specified range (-40°C to +85°C) to maintain performance and reliability.
   • Store the device within the storage temperature range (-65°C to +150°C) to prevent damage.

7. Endurance and Data Retention:

   • The device is rated for 1,000,000 write cycles.
   • Data retention is guaranteed for at least 10 years under normal operating conditions.

For detailed specifications and additional information, refer to the official datasheet provided by the manufacturer.

(For reference only)