Details
BUY AM29LV641DL-120REF https://www.utsource.net/itm/p/6340326.html
| Parameter | Description | Value | Unit |
|---|---|---|---|
| Device Type | Flash Memory | AM29LV641DL-120REF | |
| Memory Organization | Organization | 8M x 8 | |
| Voltage Supply (Vcc) | Operating voltage range | 2.7 to 3.6 | V |
| Interface | Communication interface | SPI | |
| Access Time | Maximum access time | 120 | ns |
| Package Type | Package type | TSOP II | |
| Temperature Range | Operating temperature range | -40 to +85 | °C |
| Endurance | Typical endurance | 100,000 | cycles |
| Data Retention | Data retention | 20 | years |
| Write Cycle Time | Time required for a write cycle | 5 | ms |
| Sector Size | Block size for sector erase | 64 | KB |
| Chip Erase Time | Time required for chip erase | 35 | s |
Instructions:
- Power Supply Requirements: Ensure the device is powered within the specified voltage range of 2.7V to 3.6V.
- Initialization: Before any read or write operations, initialize the device according to the SPI protocol specifications.
- Write Operations: Perform write operations using page programming commands. Each write operation should not exceed the maximum access time of 120ns.
- Erase Operations: Use sector erase or chip erase commands as needed. Note the different times required for these operations.
- Temperature Considerations: Operate the device within the temperature range of -40°C to +85°C to ensure reliable performance.
- Endurance and Data Retention: Be aware of the endurance limit of 100,000 write/erase cycles and data retention period of 20 years when planning for long-term use.
- Handling Precautions: Handle the device with care to avoid damage from electrostatic discharge (ESD).
View more about AM29LV641DL-120REF on main site
