Details

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BUY MT48LC4M32B2P-7ITG https://www.utsource.net/itm/p/6348238.html

Parameter	Description	Value
Device	Memory Device	MT48LC4M32B2P-7ITG
Type	SDRAM (Synchronous DRAM)
Organization	Data Width x Banks x Rows x Columns	32 bits x 4 banks x 8192 rows x 1024 columns
Density	Total Memory Capacity	128 Mbit (16 MB)
Supply Voltage	VCC (Core)	2.5V ± 0.2V
Supply Voltage	VCCQ (I/O)	3.3V ± 0.3V
Operating Temperature	Industrial Temperature Range	-40°C to +85°C
Access Time	tAC (Access Time from Clock)	7 ns
Cycle Time	tRC (Row Cycle Time)	60 ns
Refresh Rate	Refresh Cycles per Second	8192 (every 64 ms)
Package	Form Factor	BGA (Ball Grid Array)
Pin Count	Number of Balls	56 balls
Data Rate	Maximum Data Rate	133 MHz (PC133)
CAS Latency	CAS Latency (CL)	2.5 cycles
Write Recovery Time	tWR (Write Recovery Time)	15 ns
Power Consumption	Active Power (Typical)	1.2W
Power Consumption	Standby Power (Typical)	0.1W

Instructions for Use:

1. Power Supply:

   • Ensure that the core voltage (VCC) is set to 2.5V ± 0.2V.
   • Ensure that the I/O voltage (VCCQ) is set to 3.3V ± 0.3V.

2. Clock Signal:

   • Provide a stable clock signal to the CLK pin. The device supports a maximum data rate of 133 MHz.

3. Initialization:

   • After power-up, perform a reset by asserting the /CS, /RAS, /CAS, and /WE signals high for at least 200 ns.
   • Initialize the memory by performing a mode register set (MRS) command to configure the CAS latency and other parameters.

4. Memory Access:

   • To read or write data, assert the /CS signal low to select the device.
   • Assert the /RAS signal low to activate a row.
   • Assert the /CAS signal low to access a column.
   • For writes, assert the /WE signal low to enable writing data to the selected location.
   • For reads, keep the /WE signal high to read data from the selected location.

5. Refresh:

   • Perform a refresh cycle every 64 ms to maintain data integrity. This can be done by asserting the /RAS signal low while keeping the /CAS signal high and the address lines at a specific refresh address.

6. Power Management:

   • To enter self-refresh mode, assert the /CKE (Clock Enable) signal low while keeping the /CS, /RAS, /CAS, and /WE signals high.
   • To exit self-refresh mode, assert the /CKE signal high.

7. Error Handling:

   • Monitor the DQ pins for data integrity during read operations.
   • Implement error correction codes (ECC) if required for critical applications.

8. Termination:

   • Ensure proper termination of the data lines (DQ) and control lines to prevent signal reflections and ensure reliable operation.

9. Thermal Management:

   • Ensure adequate cooling to maintain the operating temperature within the specified range (-40°C to +85°C).

10. Handling:

    • Handle the device with care to avoid static discharge and physical damage.
    • Follow proper ESD (Electrostatic Discharge) precautions when handling the device.

(For reference only)