Details

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BUY MT41K256M16HA-125E https://www.utsource.net/itm/p/6373531.html

Parameter	Description	Value
Device Type	High-Speed Synchronous DRAM	MT41K256M16HA-125E
Organization	Memory Organization	256 Mbit, 16M x 16
Supply Voltage (Vdd)	Core Supply Voltage	1.35V ± 0.1V
Supply Voltage (Vddq)	I/O Supply Voltage	1.35V ± 0.1V
Operating Temperature	Industrial Temperature Range	-40°C to +85°C
Access Time (tAA)	Access Time	12.5 ns
Cycle Time (tRC)	Row Cycle Time	47.5 ns
Refresh Rate	Refresh Rate	8.6 us (Self Refresh)
Package Type	Package	FBGA (Fine Pitch Ball Grid Array)
Ball Pitch	Ball Pitch	0.8 mm
Ball Count	Number of Balls	100
Data Rate	Data Rate	Up to 1600 Mbps
CAS Latency (CL)	CAS Latency	11
RAS# to CAS# Delay (tRCD)	RAS# to CAS# Delay	13.75 ns
Precharge Time (tRP)	Precharge Command Period	13.75 ns
Row Active Time (tRAS)	Row Active Time (Minimum)	37.5 ns

Instructions for Use:

1. Power Supply Connection: Ensure that both Vdd and Vddq are supplied with a stable 1.35V ± 0.1V. Connect the ground (GND) pins properly to maintain signal integrity.
2. Signal Integrity: Use proper PCB layout techniques to minimize noise and crosstalk, especially for high-speed signals like DQ, DQS, and CK.
3. Initialization Sequence: After power-up, follow the initialization sequence as specified in the datasheet to ensure reliable operation.
4. Timing Parameters: Adhere strictly to the timing parameters provided to avoid data corruption or operational issues.
5. Thermal Management: Ensure adequate cooling, especially when operating at higher frequencies or in environments approaching the maximum temperature limit.
6. Refresh Operations: Implement refresh cycles according to the specified rate to prevent data loss.
7. Handling: Handle the device with care to avoid ESD damage; use appropriate ESD protection measures during assembly and handling.

(For reference only)