Details

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BUY AT28HC64B-12PI https://www.utsource.net/itm/p/6394618.html
64K 8K x 8 High Speed CMOS E2PROM with Page Write and Software Data Protection

Parameter	Description	Value
Device		AT28HC64B-12PI
Type		Parallel EEPROM
Density	Memory Size	64 Kbit (8K x 8)
Supply Voltage (VCC)	Operating Range	2.5V to 5.5V
Standby Current (ISB)	VCC = 5.0V, VPP = 0V, TA = 25°C	1 μA max
Active Current (ICC)	VCC = 5.0V, VPP = 12.5V, TA = 25°C	10 mA max
Write Time (tW)	Typical	4 ms max
Write Cycle Time (tWC)	Minimum	10 ms min
Data Retention		100 years
Endurance	Write Cycles per Byte	1,000,000 cycles
Operating Temperature (TA)	Industrial Grade	-40°C to +85°C
Package		24-Pin PDIP (Plastic Dual In-Line Package)
Pin Configuration		VPP, A0-A12, D0-D7, OE, WE, CE, GND, VCC

Instructions for Use

1. Power Supply:

   • Connect VCC to the positive power supply (2.5V to 5.5V).
   • Connect GND to the ground.
   • VPP should be connected to VCC during normal operation and to 12.5V during programming.

2. Addressing:

   • Use the address lines A0-A12 to select the memory location you want to read from or write to.

3. Data Lines:

   • The data lines D0-D7 are used to transfer data to and from the device.

4. Control Signals:

   • CE (Chip Enable): Active low. When low, the chip is enabled.
   • OE (Output Enable): Active low. When low, the data output is enabled.
   • WE (Write Enable): Active low. When low, a write operation is initiated.

5. Reading Data:

   • Set CE and OE low.
   • Apply the desired address to A0-A12.
   • The data will appear on D0-D7 after the access time.

6. Writing Data:

   • Set CE and WE low.
   • Apply the desired address to A0-A12.
   • Apply the data to be written to D0-D7.
   • Hold WE low for at least the minimum write cycle time (10 ms).
   • Return WE high to complete the write cycle.

7. Programming:

   • For programming, VPP must be set to 12.5V.
   • Follow the write sequence as described above.
   • Ensure that the write time (4 ms) is respected to avoid data corruption.

8. Data Retention:

   • The device retains data for up to 100 years under typical conditions.

9. Endurance:

   • Each byte can be written up to 1,000,000 times.

10. Temperature Considerations:

    • The device operates reliably over the industrial temperature range of -40°C to +85°C.

11. Handling:

    • Handle the device with care to avoid damage to the pins and the package.
    • Use proper ESD (Electrostatic Discharge) protection when handling the device.

(For reference only)