Details

---

BUY MT48LC4M16A2-75 https://www.utsource.net/itm/p/6405984.html

Parameter	Description	Value	Unit
Device Type	Synchronous DRAM (SDRAM)	4M x 16	-
Package	Ball Grid Array (BGA)	56 balls	-
Supply Voltage (Vcc)	Operating Voltage	3.3	V
Supply Voltage (Vccq)	I/O Voltage	3.3	V
Operating Temperature Range	Industrial	-40 to +85	°C
Access Time (tAC)	Access Time from Clock Edge	7.5	ns
Cycle Time (tRC)	Minimum Cycle Time	60	ns
Row Address Strobe (tRAS)	Active to Precharge Command Time	45	ns
Column Address Strobe (tRCD)	Active to Read/Write Command Time	20	ns
Refresh Period (tREF)	Refresh Cycle Time	64	ms
Write Recovery Time (tWR)	Write Recovery Time	15	ns
Power Consumption (Active)	Active Mode Current	120	mA
Power Consumption (Standby)	Standby Mode Current	20	mA

Instructions for Use:

1. Power Supply:

   • Connect Vcc and Vccq to a stable 3.3V power supply.
   • Ensure proper decoupling capacitors are placed close to the power pins to minimize noise.

2. Clock Signal:

   • Provide a stable clock signal to the CLK pin.
   • The clock frequency should be within the specified range for the device.

3. Address and Data Lines:

   • Connect the address lines (A0-A11) to the appropriate address bus.
   • Connect the data lines (DQ0-DQ15) to the data bus.

4. Control Signals:

   • Apply the necessary control signals (CS#, RAS#, CAS#, WE#, DQM) according to the timing requirements.
   • Ensure that the control signals are properly synchronized with the clock signal.

5. Refresh:

   • Implement a refresh cycle every 64 milliseconds to maintain data integrity.
   • Use the auto-refresh command or self-refresh mode as needed.

6. Mode Register Set (MRS):

   • Program the mode register during initialization to set the desired operating mode.
   • Refer to the datasheet for specific mode register settings.

7. Power Management:

   • Use the power-down and self-refresh modes to reduce power consumption when the device is not actively being used.
   • Transition between modes by setting the appropriate control signals.

8. Signal Integrity:

   • Ensure proper termination and impedance matching for high-speed signals to avoid reflections and signal degradation.
   • Use differential signaling for the clock if supported by your system design.

9. Testing and Validation:

   • Perform thorough testing to validate the functionality and performance of the SDRAM in your system.
   • Use memory test patterns and diagnostic tools to ensure reliable operation.

10. Handling:

    • Handle the device with care to avoid static discharge and physical damage.
    • Follow ESD (Electrostatic Discharge) precautions during handling and assembly.

(For reference only)