Details

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BUY VND5160JTR-E https://www.utsource.net/itm/p/6455055.html
DRVR HISIDE 2CH POWERSSO12

Parameter	Symbol	Min	Typical	Max	Unit
Continuous Drain Current	ID	-	16	-	A
Pulse Drain Current	Ipp	-	32	-	A
Drain-Source Voltage	VDS	-	60	-	V
Gate-Source Voltage	VGS	-10	-	20	V
Gate Charge	Qg	-	85	-	nC
Total Power Dissipation	PD	-	100	-	W
Junction Temperature	Tj	-55	-	175	°C
Storage Temperature	Tstg	-65	-	150	°C

Instructions for Use:

1. Handling Precautions:

   • Handle with care to avoid mechanical damage.
   • Use appropriate ESD (Electrostatic Discharge) protection to prevent damage from static electricity.

2. Mounting:

   • Ensure proper heat sinking to manage thermal dissipation, especially during high current operations.
   • Follow recommended PCB layout guidelines to minimize parasitic inductance and ensure stable performance.

3. Biasing:

   • Apply gate-source voltage (VGS) within the specified range to avoid damaging the device.
   • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).

4. Thermal Management:

   • Monitor the junction temperature (Tj) to ensure it stays within the safe operating range.
   • Use thermal paste or thermal interface materials to enhance heat transfer between the device and the heatsink.

5. Storage:

   • Store in a dry, cool place to prevent moisture damage.
   • Keep away from direct sunlight and sources of heat.

6. Testing:

   • Perform initial testing at low power levels to verify correct operation before increasing power.
   • Use appropriate test equipment and follow safety guidelines to avoid injury or damage to the device.

7. Applications:

   • Suitable for high-power switching applications such as motor control, power supplies, and automotive systems.
   • Ensure the device is used within its rated parameters to avoid premature failure.

(For reference only)