PS2532-1-V

PS2532-1-V


Specifications
SKU
6455568
Details

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High Collector to Emitter Voltatge High ISOlation Voltage Multi Photocoupler Siries
Parameter Description Value Unit
Part Number Product Identifier PS2532-1-V -
Type Component Type Photodiode -
Material Semiconductor Material Silicon -
Spectral Response Wavelength Range 400 to 1100 nm
Peak Sensitivity Wavelength of Maximum Responsivity 950 nm
Reverse Voltage Maximum Reverse Voltage 50 V
Dark Current Maximum Dark Current at 25掳C 100 nA
Capacitance Junction Capacitance at 0V Reverse Bias 10 pF
Operating Temp. Operating Temperature Range -40 to +85 掳C
Storage Temp. Storage Temperature Range -65 to +150 掳C
Package Housing Type TO-46 Metal Can -
Lead Finish Lead Plating SnPb (60/40) -

Instructions for Use:

  1. Mounting:

    • Ensure that the photodiode is mounted on a clean, flat surface.
    • Use appropriate mounting hardware to secure the component without applying excessive force.
  2. Soldering:

    • Preheat the leads to avoid thermal shock.
    • Solder quickly to minimize exposure to high temperatures. The maximum soldering temperature should not exceed 260掳C for more than 10 seconds.
    • Allow the component to cool naturally after soldering.
  3. Biasing:

    • Apply reverse bias voltage as specified in the "Reverse Voltage" parameter.
    • Avoid exceeding the maximum reverse voltage to prevent damage to the photodiode.
  4. Handling:

    • Handle the photodiode with care to avoid mechanical stress or damage.
    • Use ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.
  5. Testing:

    • Test the photodiode in a controlled environment to ensure accurate measurements.
    • Measure dark current and capacitance at room temperature to verify performance.
  6. Storage:

    • Store the photodiode in a dry, cool place within the specified storage temperature range.
    • Protect the component from moisture and contaminants.
  7. Application:

    • Use the photodiode in applications requiring high sensitivity in the near-infrared spectrum, such as optical sensors, communication systems, and light detection.

For further details, refer to the datasheet provided by the manufacturer.

(For reference only)

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