PS2532-1-V
Specifications
SKU
6455568
Details
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High Collector to Emitter Voltatge High ISOlation Voltage Multi Photocoupler Siries
| Parameter | Description | Value | Unit |
|---|---|---|---|
| Part Number | Product Identifier | PS2532-1-V | - |
| Type | Component Type | Photodiode | - |
| Material | Semiconductor Material | Silicon | - |
| Spectral Response | Wavelength Range | 400 to 1100 | nm |
| Peak Sensitivity | Wavelength of Maximum Responsivity | 950 | nm |
| Reverse Voltage | Maximum Reverse Voltage | 50 | V |
| Dark Current | Maximum Dark Current at 25掳C | 100 | nA |
| Capacitance | Junction Capacitance at 0V Reverse Bias | 10 | pF |
| Operating Temp. | Operating Temperature Range | -40 to +85 | 掳C |
| Storage Temp. | Storage Temperature Range | -65 to +150 | 掳C |
| Package | Housing Type | TO-46 Metal Can | - |
| Lead Finish | Lead Plating | SnPb (60/40) | - |
Instructions for Use:
Mounting:
- Ensure that the photodiode is mounted on a clean, flat surface.
- Use appropriate mounting hardware to secure the component without applying excessive force.
Soldering:
- Preheat the leads to avoid thermal shock.
- Solder quickly to minimize exposure to high temperatures. The maximum soldering temperature should not exceed 260掳C for more than 10 seconds.
- Allow the component to cool naturally after soldering.
Biasing:
- Apply reverse bias voltage as specified in the "Reverse Voltage" parameter.
- Avoid exceeding the maximum reverse voltage to prevent damage to the photodiode.
Handling:
- Handle the photodiode with care to avoid mechanical stress or damage.
- Use ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.
Testing:
- Test the photodiode in a controlled environment to ensure accurate measurements.
- Measure dark current and capacitance at room temperature to verify performance.
Storage:
- Store the photodiode in a dry, cool place within the specified storage temperature range.
- Protect the component from moisture and contaminants.
Application:
- Use the photodiode in applications requiring high sensitivity in the near-infrared spectrum, such as optical sensors, communication systems, and light detection.
For further details, refer to the datasheet provided by the manufacturer.
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