Details

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BUY IS41C16100C-50KLI https://www.utsource.net/itm/p/7275556.html
DRAM Chip EDO 16Mbit 1Mx16 5V 42-Pin SOJ

Parameter	Description	Value
Device Type	Type of Memory	16M-Bit CMOS SRAM (2M x 8)
Supply Voltage (Vcc)	Operating Supply Voltage Range	2.7V to 3.6V
Standby Current (Icc)	Standby Current at Vcc = 3.0V	1.0 μA (max)
Active Current (Icc)	Active Current at Vcc = 3.0V, f = 50 MHz	35 mA (max)
Access Time (tAC)	Access Time from Clock Edge	5 ns (max)
Cycle Time (tCYC)	Minimum Cycle Time	10 ns (max)
Data Hold Time (tDH)	Data Hold Time	1 ns (min)
Data Setup Time (tDS)	Data Setup Time	2 ns (min)
Address Setup Time (tAS)	Address Setup Time	2 ns (min)
Address Hold Time (tAH)	Address Hold Time	1 ns (min)
Output Enable Time (tOE)	Output Enable Time	2 ns (min)
Write Enable Time (tWE)	Write Enable Time	2 ns (min)
Power-down Time (tPD)	Power-down Time	100 ns (min)
Operating Temperature (Toper)	Operating Temperature Range	-40°C to +85°C
Storage Temperature (Tstg)	Storage Temperature Range	-65°C to +150°C
Package Type	Package Type	44-pin TQFP (Thin Quad Flat Pack)
RoHS Compliance	RoHS Compliant	Yes

Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the specified range of 2.7V to 3.6V.
   • Connect the ground (GND) pin to a stable ground reference.

2. Signal Timing:

   • Ensure all timing parameters such as access time, cycle time, data setup, and hold times are met to avoid data corruption.
   • Use appropriate decoupling capacitors near the power pins to reduce noise and ensure stable operation.

3. Power Management:

   • To enter power-down mode, set the chip enable (CE) and output enable (OE) pins high while keeping the write enable (WE) pin low.
   • The device will resume normal operation when CE or OE is brought low.

4. Data Input/Output:

   • Data input should be stable during the write cycle, and data output should be sampled after the read cycle has completed.
   • Use pull-up resistors on the data lines if necessary to ensure proper logic levels.

5. Addressing:

   • Address lines must be stable before the address setup time (tAS) and held stable for the address hold time (tAH).

6. Environmental Considerations:

   • Operate the device within the specified temperature ranges to avoid damage.
   • Store the device in a dry environment to prevent moisture-related issues.

7. Handling:

   • Handle the device with care to avoid static discharge and physical damage.
   • Follow standard ESD (Electrostatic Discharge) precautions when handling the device.

8. Testing:

   • Before integrating the device into a system, perform basic functionality tests to ensure it meets the specified parameters.
   • Use a test pattern to verify read and write operations across the entire memory array.

(For reference only)