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BUY VNS3NV04DP-E https://www.utsource.net/itm/p/7279488.html
The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package. The OMNIFET II is designed using STMicroelectronics? VIPower? M0-3 technology and is intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring voltage at the input pin
Description: VNS3NV04DP-E is a low-voltage, low-power, single-channel, high-speed, low-side, N-channel MOSFET driver from STMicroelectronics. Features: High-speed switching: tON/tOFF = 10/15 ns Low-side switch Low-voltage operation: 4.5 V to 18 V Low power consumption: Icc = 5 mA Undervoltage lockout (UVLO) Thermal shutdown (TSD) Overcurrent protection (OCP) Short-circuit protection (SCP) High-side output (HO) Open-drain output (OD) Soft-start (SS) Programmable dead time (DT) Applications: Automotive applications Motor control Industrial applications Power conversion Power supply Lighting control (For reference only)