Details

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BUY IX6R11P7 https://www.utsource.net/itm/p/7561249.html
Half-Bridge Gate Driver IC Non-Inverting 14-DIP

Parameter	Value	Unit
Part Number	IX6R11P7	-
Type	MOSFET	-
Package	TO-252	-
Maximum Drain-Source Voltage (VDS)	60	V
Maximum Gate-Source Voltage (VGS)	±20	V
Continuous Drain Current (ID)	11	A
Peak Pulse Drain Current (IDM)	34	A
Total Power Dissipation (PD)	2.8	W
Junction Temperature (TJ)	-55 to 150	°C
Storage Temperature (TSTG)	-65 to 150	°C
Gate Charge (QG)	19	nC
Input Capacitance (Ciss)	1100	pF
Output Capacitance (Coss)	150	pF
Reverse Transfer Capacitance (Crss)	220	pF
RDS(on) at VGS = 10V	1.1	Ω

Instructions:

1. Handling Precautions:

   • Avoid exposing the device to temperatures outside the specified range.
   • Use appropriate ESD protection when handling the device.

2. Mounting:

   • Ensure proper heat sinking if operating near the maximum power dissipation.
   • Follow recommended soldering profiles to avoid thermal shock.

3. Operation:

   • Do not exceed the maximum ratings for VDS, VGS, and ID.
   • Ensure the gate voltage is within the specified limits to prevent damage.
   • Monitor the junction temperature to avoid overheating.

4. Storage:

   • Store in a dry, cool place within the specified storage temperature range.
   • Protect from moisture and static electricity.

5. Testing:

   • Use a suitable test setup to verify the parameters.
   • Refer to the datasheet for detailed testing procedures and conditions.

(For reference only)