Details

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BUY MB85RS64VPNF-G-JNERE1 https://www.utsource.net/itm/p/7576747.html
FRAM (Ferroelectric RAM) Memory IC 64Kb (8K x 8) SPI 20MHz 8-SOP

Parameter	Description	Value	Unit
Device Type	Non-Volatile FRAM Memory	-	-
Memory Size	Total Memory Capacity	64 Kbit (8 KByte)	-
Organization	Memory Organization	8 K x 8	-
Interface	Communication Protocol	SPI (Serial Peripheral Interface)	-
Operating Voltage	Supply Voltage Range	1.7 to 3.6	V
Operating Temperature	Operating Temperature Range	-40 to +85	°C
Standby Current	Quiescent Current (VCC = 3.0V)	0.1	μA
Active Current	Active Current (VCC = 3.0V, fCLK = 20 MHz)	2.0	mA
Write Time	Write Cycle Time	100	ns
Read Time	Read Cycle Time	100	ns
Package	Package Type	8-pin SOIC-W	-
Endurance	Write/Read Cycles	10^14	-
Data Retention	Data Retention at 25°C	10 years	-

Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage is within the specified range of 1.7V to 3.6V.
   • Use a stable power source to avoid voltage fluctuations that could affect memory operations.

2. SPI Interface:

   • Connect the device to the SPI bus using the following pins:
     • CS (Chip Select): Low to enable communication.
     • SCK (Clock): Provides the clock signal for data transfer.
     • MOSI (Master Out Slave In): Data from the master to the slave.
     • MISO (Master In Slave Out): Data from the slave to the master.
   • Set the clock frequency (fCLK) to a maximum of 20 MHz for optimal performance.

3. Initialization:

   • Before performing any read or write operations, ensure the device is properly initialized by setting the CS pin low.
   • Send the appropriate command codes to the device to start communication.

4. Read Operation:

   • To read data, send the READ command (0x03) followed by the address of the memory location.
   • The device will respond with the data stored at the specified address.

5. Write Operation:

   • To write data, send the WRITE command (0x02) followed by the address and the data to be written.
   • The device will store the data at the specified address within 100 nanoseconds.

6. Endurance and Data Retention:

   • The device supports up to 10^14 write/read cycles, making it suitable for high-frequency data logging applications.
   • Data retention is guaranteed for 10 years at 25°C. Store the device in a cool, dry environment to maximize data retention.

7. Handling Precautions:

   • Handle the device with care to avoid damage to the pins.
   • Avoid exposing the device to extreme temperatures or humidity.
   • Follow proper ESD (Electrostatic Discharge) precautions when handling the device.

8. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Keep the device away from strong magnetic fields to avoid data corruption.

For detailed specifications and additional information, refer to the datasheet provided by the manufacturer.

(For reference only)