Details

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BUY MT25QL128ABA8ESF-0SIT https://www.utsource.net/itm/p/7582923.html
FLASH - NOR Memory IC 128Mb (16M x 8) SPI 133MHz 16-SOP2

Parameter	Description	Value	Unit
Device	Full Part Number	MT25QL128ABA8ESF-0SIT	-
Memory Type	Flash Memory Type	Quad SPI NAND Flash	-
Density	Memory Density	128 Mbit (16 MB)	-
Organization	Memory Organization	16M x 8	-
VCC Range	Supply Voltage Range	1.7 V to 3.6 V	V
I/O Voltage	I/O Voltage Range	1.7 V to 3.6 V	V
Operating Temperature	Industrial Temperature Range	-40°C to +85°C	°C
Package	Package Type	WSON-8	-
Dimensions	Package Dimensions	5.0 x 3.0 x 0.9 mm	mm
Programming Voltage	Programming Voltage	1.7 V to 3.6 V	V
Erase Time	Block Erase Time	2 ms (typical)	ms
Page Program Time	Page Program Time	200 μs (maximum)	μs
Read Current	Read Current (VCC = 3.6 V)	10 mA (maximum)	mA
Write Current	Write Current (VCC = 3.6 V)	10 mA (maximum)	mA
Standby Current	Standby Current (VCC = 3.6 V)	1 μA (maximum)	μA
Data Retention	Data Retention	10 years (minimum)	years
Endurance	Endurance (Program/Erase Cycles)	100,000 cycles (minimum)	cycles
Write Protect	Write Protect Pin	WP# (active low)	-
Hold Function	Hold Function Pin	HOLD# (active low)	-
Quad I/O	Quad I/O Support	Yes	-
Serial Interface	Serial Interface Standard	SPI, QSPI, DTR-QSPI	-

Instructions for Use:

1. Power Supply:

   • Connect V_CC to a stable power supply within the range of 1.7 V to 3.6 V.
   • Ensure that the I/O voltage is also within the same range.

2. Temperature Considerations:

   • Operate the device within the industrial temperature range of -40°C to +85°C to ensure reliable performance.

3. Programming and Erasing:

   • Use the appropriate commands to program and erase the memory. Refer to the device datasheet for specific command sequences.
   • The block erase time is typically 2 ms, and the page program time is a maximum of 200 μs.

4. Current Consumption:

   • Monitor the current consumption during read and write operations to ensure it does not exceed 10 mA.
   • In standby mode, the current consumption should be less than 1 μA.

5. Data Retention and Endurance:

   • The device supports data retention for at least 10 years and can withstand up to 100,000 program/erase cycles.

6. Write Protect and Hold Functions:

   • Use the WP# pin to prevent accidental writes by pulling it low.
   • Use the HOLD# pin to pause ongoing operations by pulling it low.

7. Quad I/O Support:

   • Utilize the quad I/O support for faster data transfer rates. The device supports SPI, QSPI, and DTR-QSPI interfaces.

8. Package Handling:

   • Handle the WSON-8 package with care to avoid damage to the pins and the device itself.

For detailed command sequences and timing diagrams, refer to the device datasheet provided by Micron Technology.

(For reference only)