Details

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BUY LH5116-10F https://www.utsource.net/itm/p/7597473.html
SRAM Memory IC 16Kb (2K x 8) Parallel 100ns 24-DIP

Parameter	Description	Value	Unit
Part Number	Device Identifier	LH5116-10F	-
Type	Component Type	High-Speed Photodiode	-
Material	Semiconductor Material	Silicon (Si)	-
Spectral Range	Wavelength Range	400 to 1100	nm
Peak Sensitivity	Peak Response Wavelength	950	nm
Photocurrent	Maximum Output Current	10	μA
Dark Current	Current at No Light	10	nA
Capacitance	Junction Capacitance	10	pF
Reverse Voltage	Maximum Reverse Voltage	5	V
Operating Temperature	Temperature Range	-40 to +85	°C
Storage Temperature	Storage Range	-40 to +85	°C
Package	Enclosure Type	TO-46	-
Lead Finish	Lead Coating	Tin (Sn)	-

Instructions for Use:

1. Mounting:

   • Ensure the photodiode is mounted on a stable surface to avoid mechanical stress.
   • Use appropriate heat sinks if high power dissipation is expected.

2. Biasing:

   • Apply reverse bias voltage up to the maximum specified value (5V) to reduce dark current and improve response time.
   • Avoid exceeding the maximum reverse voltage to prevent damage.

3. Light Exposure:

   • Ensure the photodiode is aligned with the light source to maximize photocurrent.
   • Shield the device from unwanted light sources to minimize noise.

4. Temperature Considerations:

   • Operate within the specified temperature range to ensure reliable performance.
   • Store the device in a cool, dry place to prevent degradation.

5. Handling:

   • Handle the photodiode with care to avoid damaging the sensitive junction.
   • Use anti-static wrist straps and mats to prevent electrostatic discharge (ESD).

6. Testing:

   • Measure the photocurrent under controlled light conditions to verify performance.
   • Use a multimeter or oscilloscope to monitor the output signal.

7. Storage:

   • Store the photodiode in a sealed, moisture-proof container when not in use.
   • Follow recommended storage guidelines to maintain device integrity.

(For reference only)