Details

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BUY CY6264-55SNXIT https://www.utsource.net/itm/p/7599549.html
SRAM - Asynchronous Memory IC 64Kb (8K x 8) Parallel 55ns 28-SOIC

Parameter	Description	Value
Device Type	SRAM	64K x 8
Supply Voltage (Vcc)	Operating Supply Voltage Range	4.5V to 5.5V
Operating Temperature	Industrial Temperature Range	-40°C to +85°C
Access Time (taa)	Access Time at Vcc = 5V	55ns
Data Retention	Data Retention Time at Vcc = 5V	200 years
Package Type	SOP (Small Outline Package)	28-pin
Pins	Number of Pins	28
Write Cycle Time	Write Cycle Time at Vcc = 5V	55ns
Standby Current	Standby Current at Vcc = 5V	10μA
Active Current	Active Current at Vcc = 5V	35mA
Output Drive Capability	Output Drive Capability per Pin	±20mA
Clocking	Asynchronous	-
Organization	Memory Organization	64K x 8
Manufacturer	Cypress Semiconductor	-

Instructions for Use

1. Power Supply:

   • Ensure that the supply voltage (Vcc) is within the specified range of 4.5V to 5.5V.
   • Connect the ground (GND) pin to a stable ground reference.

2. Address Lines:

   • Connect the address lines (A0 to A15) to the appropriate address signals from your microcontroller or system.

3. Data Lines:

   • Connect the data lines (D0 to D7) to the corresponding data lines of your microcontroller or system.

4. Control Signals:

   • Connect the chip select (CS), output enable (OE), and write enable (WE) pins to the control signals from your microcontroller or system.
   • CS: Low to activate the chip.
   • OE: Low to enable data output.
   • WE: Low to write data.

5. Timing Considerations:

   • Ensure that the access time (taa) and write cycle time are respected to avoid data corruption.
   • The device operates asynchronously, so timing must be managed by the controlling system.

6. Power-Up and Power-Down:

   • During power-up, ensure that Vcc rises to its nominal value before applying any control signals.
   • During power-down, ensure that all control signals are stable and low before removing Vcc.

7. Handling:

   • Handle the device with care to avoid static discharge, which can damage the internal circuits.
   • Store the device in a dry, static-free environment when not in use.

8. Testing:

   • After installation, perform a read/write test to verify proper operation and data integrity.

9. Documentation:

   • Refer to the datasheet for detailed specifications and application notes provided by Cypress Semiconductor.

By following these instructions, you can ensure reliable and efficient operation of the CY6264-55SNXIT SRAM device.

(For reference only)