Details

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BUY AS6C6264A-70PCN https://www.utsource.net/itm/p/7605605.html
SRAM - Asynchronous Memory IC 64Kb (8K x 8) Parallel 70ns 28-PDIP

Parameter	Description	Value
Device Type	Type of Memory	64K x 8 CMOS Static RAM
Supply Voltage (VCC)	Operating Supply Voltage	5.0V ± 0.5V
Operating Temperature Range (TA)	Ambient Operating Temperature	-40°C to +85°C
Access Time (tAC)	Access Time at VCC = 5.0V, TA = 25°C	70ns max
Cycle Time (tCYC)	Cycle Time at VCC = 5.0V, TA = 25°C	70ns max
Output Enable Time (tOE)	Output Enable Time at VCC = 5.0V, TA = 25°C	15ns max
Write Enable Time (tWE)	Write Enable Time at VCC = 5.0V, TA = 25°C	15ns max
Data Hold Time (tDH)	Data Hold Time at VCC = 5.0V, TA = 25°C	5ns min
Address Setup Time (tAS)	Address Setup Time at VCC = 5.0V, TA = 25°C	20ns max
Data Setup Time (tDS)	Data Setup Time at VCC = 5.0V, TA = 25°C	20ns max
Power Consumption (ICC)	Active Current at VCC = 5.0V, TA = 25°C	20mA max
Standby Current (ISB)	Standby Current at VCC = 5.0V, TA = 25°C	10μA max
Package Type	Package Style	28-Pin Plastic DIP (D)
Pin Configuration	Number of Pins	28
Storage Temperature Range (TSTG)	Storage Temperature	-65°C to +150°C

Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage (VCC) is within the specified range of 4.5V to 5.5V.
   • Connect VCC to the positive power supply and GND to the ground.

2. Address Lines:

   • Connect the address lines (A0-A15) to the appropriate address bus.
   • Ensure the address setup time (tAS) is met before the falling edge of the write enable (WE#) or output enable (OE#) signals.

3. Data Lines:

   • Connect the data lines (D0-D7) to the data bus.
   • Ensure the data setup time (tDS) and data hold time (tDH) are met during read and write operations.

4. Control Signals:

   • Write Enable (WE#): Low to initiate a write operation. Ensure the write enable time (tWE) is met.
   • Output Enable (OE#): Low to enable data output. Ensure the output enable time (tOE) is met.
   • Chip Select (CS#): Low to select the device. The device is deselected when CS# is high.

5. Timing Considerations:

   • Ensure all timing parameters (tAC, tCYC, tOE, tWE, tDS, tDH, tAS) are met to avoid data corruption or incorrect operation.
   • Refer to the timing diagram in the datasheet for detailed timing relationships.

6. Handling:

   • Handle the device with care to avoid static discharge.
   • Store the device in a dry environment to prevent moisture damage.

7. Testing:

   • Before integrating the device into a system, perform functional tests to ensure it meets the specified performance criteria.

8. Compliance:

   • Ensure that the device complies with all relevant safety and regulatory standards for your application.

(For reference only)