MMBT5551LT1G(100PCS)

MMBT5551LT1G(100PCS)

Category: Transistors

Specifications
Details

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Parameter Description
Part Number MMBT5551LT1G
Quantity 100PCS
Type Bipolar Transistor
Polarity NPN
Package Type SOT-23
Collector-Emitter Voltage (Vce) 30V
Emitter-Base Voltage (Veb) 6V
Collector Current (Ic) 150mA
Power Dissipation (Ptot) 350mW
Transition Frequency (ft) 300MHz
DC Current Gain (hFE) Min 110, Max 800 @ Ic=10mA, Vce=1V
Storage Temperature Range -65°C to +150°C
Operating Temperature Range -55°C to +150°C
Mounting Type Surface Mount Technology (SMT)

Instructions for Use:

  1. Handling Precautions:

    • Handle with care to avoid damage from electrostatic discharge (ESD). Use proper ESD protection equipment.
  2. Mounting:

    • Ensure the correct orientation of the component during soldering. The SOT-23 package has a specific pin configuration that should be aligned correctly.
    • Follow recommended reflow soldering profiles to prevent thermal damage.
  3. Storage:

    • Store in a dry place away from direct sunlight and extreme temperatures.
    • Keep in original packaging until ready for use to protect against static and physical damage.
  4. Application:

    • Suitable for general-purpose switching and amplification applications.
    • Check the maximum ratings to ensure they are not exceeded in your application design.
  5. Testing:

    • After mounting, verify connections and functionality using appropriate test equipment.
(For reference only)

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