FDP3682  TO-220

FDP3682 TO-220

Category: Transistors

Specifications
Details

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Parameter Symbol Min Typ Max Unit Description
Collector-Emitter Voltage V CES - 60 V Maximum voltage between collector and emitter with the base open.
Collector-Base Voltage V CBO - 70 V Maximum voltage between collector and base with the emitter open.
Emitter-Base Voltage V EBO - 5 V Maximum voltage between emitter and base with the collector open.
Continuous Collector Current I CM - 10 A Maximum continuous current through the collector.
Power Dissipation P T - 200 mW Maximum power dissipation at a given ambient temperature.
Junction Temperature T J - 150 °C Maximum allowable junction temperature.
Storage Temperature Range T STG -55 150 °C Operating temperature range for storage.

Instructions:

  1. Mounting: Ensure proper heat sinking when mounting the FDP3682 in TO-220 package to handle high power dissipation.
  2. Soldering: Use a soldering temperature not exceeding 260°C for no more than 10 seconds to avoid damage.
  3. Handling: Handle with care to prevent static damage; use anti-static measures.
  4. Testing: Do not exceed the maximum ratings during testing or operation to prevent device failure.
  5. Storage: Store in a dry, cool place within the specified storage temperature range to maintain reliability.
  6. Connections: Ensure all connections are secure and insulated to prevent short circuits.
  7. Applications: Suitable for general-purpose switching and amplification applications requiring high efficiency and low saturation voltage.
(For reference only)

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