FQPF10N80C

FQPF10N80C

Category: Transistors

Specifications
SKU
8646676
Details

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Parameter Symbol Min Typical Max Unit Conditions
Drain-Source Voltage VDS - - 800 V -
Gate-Source Voltage VGS -20 - 20 V -
Continuous Drain Current ID - - 10 A TC = 25掳C
- - 7 A TC = 100掳C
Pulse Drain Current Ipp - - 30 A t = 10 渭s, Duty = 1%
Power Dissipation PD - - 140 W TC = 25掳C
- - 90 W TC = 100掳C
Junction Temperature Tj - - 150 掳C -
Storage Temperature Tstg -65 - 150 掳C -
Thermal Resistance R胃JC - - 0.7 掳C/W Junction to Case
R胃JA - - 62 掳C/W Junction to Ambient

Instructions for Use:

  1. Mounting and Handling:

    • Handle the device with care to avoid mechanical damage.
    • Ensure proper heat sinking to manage thermal resistance and prevent overheating.
  2. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly.
    • Use appropriate gate drive circuits to ensure stable operation and prevent overvoltage or overcurrent conditions.
  3. Thermal Management:

    • Ensure adequate cooling, especially when operating at high power levels.
    • Monitor the junction temperature to stay within the specified limits.
  4. Storage:

    • Store the device in a dry, cool place to prevent moisture damage.
    • Avoid exposing the device to extreme temperatures or humidity.
  5. Testing:

    • Perform initial testing under controlled conditions to verify proper operation.
    • Use appropriate test equipment and follow safety guidelines to prevent damage to the device or injury.
  6. Safety Precautions:

    • Always disconnect power before making connections or adjustments.
    • Use protective gear such as gloves and safety glasses when handling high-voltage components.
  7. Compliance:

    • Ensure that the device is used in compliance with all relevant safety and regulatory standards.
(For reference only)

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