IR2110S IR2110STRPBF

IR2110S IR2110STRPBF

Category: Transistors

Specifications
Details

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Parameter IR2110S / IR2110STRPBF
Supply Voltage (VDD) 10V to 20V
Logic Supply Voltage (VDD) 4.5V to 20V
Input Threshold (VINH, VINL) 1.8V to 3.3V
Floating Channel Operation Up to 600V
Output Source Current (HO, LO) 2A peak
Output Sink Current (HO, LO) 4A peak
Propagation Delay Time (tPHL, tPLH) 75ns typ.
Matched Propagation Delay (ΔtPHL, ΔtPLH) ±25ns max.
Operating Temperature Range -40°C to 125°C
Package Type SOIC-8

Instructions:

  1. Power Supply Connections:

    • Connect VDD and COM for the logic supply.
    • Connect VSS and VS for the high-side driver supply.
  2. Signal Input:

    • Apply control signals to IN (input) pin.
    • Use separate inputs for high-side (IN) and low-side drivers if required.
  3. Output Connections:

    • Connect HO (high-side output) and LO (low-side output) to the gates of the MOSFETs or IGBTs being driven.
  4. Bootstrap Capacitor:

    • For high-side operation, a bootstrap capacitor must be connected between VB and VS pins to provide the necessary voltage for the high-side driver.
  5. Decoupling Capacitors:

    • Place decoupling capacitors close to the power supply pins (VDD and COM) to ensure stable operation.
  6. Heat Dissipation:

    • Ensure adequate heat dissipation, especially in high-frequency applications, as the device can dissipate significant power.
  7. Protection:

    • Incorporate protection circuits such as clamping diodes to protect against overvoltage conditions on the outputs.
  8. Layout Considerations:

    • Keep the layout compact and minimize trace lengths to reduce parasitic inductance, particularly for the high-current paths.
(For reference only)

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