1N4148 DIODE GEN PURP 100V 200MA DO35

1N4148 DIODE GEN PURP 100V 200MA DO35

Category: Transistors

Specifications
Details

BUY 1N4148 DIODE GEN PURP 100V 200MA DO35 https://www.utsource.net/itm/p/8646888.html

Parameter Value Unit
Type General Purpose -
Maximum Repetitive Peak Reverse Voltage (VRRM) 100 V
Maximum Average Rectified Current (Io) 200 mA
Maximum Power Dissipation (Ptot) 350 mW
Junction Operating Temperature Range (Tj) -55 to 150 °C
Forward Voltage (Vf) at If = 10mA 1.0 V
Reverse Recovery Time (trr) 4 ns
Package Type DO-35 -

Instructions for Use:

  1. Handling Precautions: The 1N4148 diode is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection measures.
  2. Mounting: Ensure that the mounting method does not exceed the maximum power dissipation limit of 350 mW. Avoid excessive heat during soldering.
  3. Operating Conditions: Operate within the specified temperature range (-55°C to 150°C) to ensure reliable performance.
  4. Testing: When testing or measuring the diode, do not exceed the maximum forward current (200 mA) or reverse voltage (100 V) ratings.
  5. Applications: Suitable for general-purpose switching and protection circuits due to its fast recovery time and low forward voltage drop.
(For reference only)

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