Details

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BUY SI1488DH-T1-E3 https://www.utsource.net/itm/p/8647091.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Supply Voltage	VDD	Operating	1.6		5.5	V
Quiescent Current	IQ	VDD = 5V		30		μA
Output Current	IO	Continuous		200		mA
Breakdown Voltage	BV	IO = 1mA		40		V
Forward Voltage	VF	IO = 200mA	1.2		1.8	V
Power Dissipation	PD			600		mW
Junction Temperature	Tj	Operating	-40		125	°C
Storage Temperature	Tstg		-65		150	°C

Instructions for SI1488DH-T1-E3

1. Power Supply Connection:

   • Connect the supply voltage (VDD) within the range of 1.6V to 5.5V.
   • Ensure the power supply is stable and within specified limits to avoid damage.

2. Handling Static Electricity:

   • The device is sensitive to static electricity. Handle with care, preferably using anti-static equipment.

3. Operating Temperature:

   • Operate the device within the junction temperature range of -40°C to 125°C to ensure reliable performance.

4. Output Current Limitation:

   • Do not exceed the maximum continuous output current of 200mA to prevent overheating and potential damage.

5. Power Dissipation Management:

   • Keep the power dissipation below 600mW. Use appropriate heat sinking if necessary.

6. Storage Conditions:

   • Store the device in a controlled environment within the temperature range of -65°C to 150°C.

7. Soldering Process:

   • Follow standard soldering practices. Avoid excessive heat during soldering to prevent damage to the device.

8. Electrical Characteristics:

   • Refer to the parameter table for specific electrical characteristics under different operating conditions.

9. Application Specific Guidelines:

   • For application-specific guidelines and recommendations, refer to the datasheet or consult the manufacturer’s technical support.

(For reference only)