FDP023N08B

FDP023N08B

Category: Transistors

Specifications
Details

BUY FDP023N08B https://www.utsource.net/itm/p/8647118.html

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source On-State Resistance RDS(on) VGS = 10V, ID = 2A - 23 -
Gate-Threshold Voltage VGS(th) ID = 250μA, IDS = 1mA 1.0 1.5 2.5 V
Continuous Drain Current ID TC = 25°C - - 2.0 A
Gate Charge QG VDS = 8V, VGS = 10V, ID = 2A - 7.6 - nC
Input Capacitance Ciss VDS = 8V, VGS = 0V - 900 - pF
Output Capacitance Coss VDS = 8V, VGS = 0V - 410 - pF
Total Power Dissipation PD TC = 25°C - - 1.0 W

Instructions for FDP023N08B:

  1. Handling and Storage:

    • Store in a dry, cool place.
    • Handle with care to avoid damage to the leads or body.
  2. Mounting:

    • Ensure proper heat sinking if operating near maximum power dissipation.
    • Use appropriate mounting hardware to secure the device firmly.
  3. Electrical Connections:

    • Verify that all connections are secure and correctly made according to the circuit diagram.
    • Ensure the gate drive voltage is within the specified range to prevent damage.
  4. Operating Conditions:

    • Do not exceed the maximum ratings provided in the parameter table.
    • Operate within the temperature limits specified by the manufacturer.
  5. Testing:

    • When testing the device, use the specified test conditions for accurate measurements.
    • Avoid prolonged operation at high current levels without adequate cooling.
  6. Safety Precautions:

    • Always follow safety guidelines when handling electrical components.
    • Ensure proper grounding and isolation to prevent electrical shock.
(For reference only)

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