Details

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BUY MT41K256M16TW-107:P FBGA https://www.utsource.net/itm/p/8647934.html

Parameter	Description	Value
Package	Package Type	FBGA
Capacity	Memory Capacity	256 Mbit (32 MB)
Organization	Data Organization	x16
Vcc	Supply Voltage	1.8 V ± 0.1 V
Vccq	I/O Supply Voltage	1.8 V ± 0.1 V
tCL	CAS Latency	9, 10, 11, 12, 13, 14, 15
tRCD	RAS to CAS Delay	9, 10, 11, 12, 13, 14, 15
tRP	Row Precharge Time	9, 10, 11, 12, 13, 14, 15
tRAS	Active to Precharge Delay	27, 30, 33, 36, 39, 42, 45
tRC	Row Cycle Time	36, 40, 44, 48, 52, 56, 60
tRFC	Refresh Cycle Time	67.5 ns (at 107 MHz)
tWR	Write Recovery Time	15 cycles
tWTR	Write to Read Delay	4 cycles
tRTP	Read to Precharge Delay	7.5 ns
tRRD	Row Active to Row Active Delay	6 cycles
Operating Temperature	Temperature Range	-40°C to +85°C
Storage Temperature	Storage Temperature Range	-65°C to +150°C
Data Retention	Data Retention Time	64 ms (typical)
Refresh Rate	Refresh Rate	8192 refresh cycles per 64 ms
Package Dimensions	Package Size	13 mm x 13 mm x 1.2 mm
Ball Pitch	Ball Pitch	1.0 mm
Ball Array	Ball Array	169-ball FBGA
RoHS Compliance	RoHS Compliance	Yes

Instructions for Use:

1. Power Supply:

   • Ensure that both Vcc and Vccq are supplied with 1.8 V ± 0.1 V.
   • Use decoupling capacitors close to the power pins to minimize noise.

2. Signal Integrity:

   • Use controlled impedance traces for high-speed signals.
   • Terminate differential pairs and clock lines as specified in the datasheet.

3. Initialization:

   • Perform a reset or initialization sequence as described in the datasheet to configure the memory.
   • Set the mode register according to the desired operating parameters (CAS latency, burst length, etc.).

4. Timing Parameters:

   • Adhere to the specified timing parameters (tCL, tRCD, tRP, etc.) to ensure reliable operation.
   • Use a PLL or DLL to generate the required clock signals and maintain synchronization.

5. Refresh:

   • Implement the refresh cycle as specified (8192 refresh cycles per 64 ms).
   • Ensure that the refresh is performed even during periods of low activity to prevent data loss.

6. Temperature:

   • Operate the device within the specified temperature range (-40°C to +85°C) to avoid damage.
   • Store the device within the storage temperature range (-65°C to +150°C).

7. Handling:

   • Handle the device with care to avoid static discharge.
   • Follow ESD guidelines to prevent damage during handling and assembly.

8. Testing:

   • Use the provided test patterns and sequences to verify the functionality of the memory.
   • Refer to the datasheet for detailed testing procedures.

For more detailed information, refer to the full datasheet and application notes provided by the manufacturer.

(For reference only)