Details

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BUY S25FL032P0XMFI010 https://www.utsource.net/itm/p/8648023.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Supply Voltage	VCC	Operating	2.7		3.6	V
Standby Current	ISB	VCC = 3.0V		1	5	渭A
Active Current	IOP	VCC = 3.0V, TA = 25掳C		4	8	mA
Programming Current	IPGM	VCC = 3.0V		1	5	mA
Erase Time	TBER	Sector Erase		200	300	ms
Page Program Time	TPW	Page Write		1	3	ms
Data Retention			20			Years
Operating Temperature	TA	Industrial	-40		85	掳C
Storage Temperature	TSTG		-40		125	掳C

Instructions for S25FL032P0XMFI010

1. Power Supply:

   • Ensure the supply voltage (VCC) is within the range of 2.7V to 3.6V.

2. Initialization:

   • After power-up, wait for a minimum of 1ms before issuing any commands to allow the device to stabilize.

3. Read Operations:

   • Use the Read Data command (03h) to read data from the memory array.
   • Address lines must be stable during the rising edge of the clock signal.

4. Write Operations:

   • Before writing, ensure that the write protection pin (WP) is not enabled.
   • Use the Write Enable command (06h) before performing any write operations.
   • For page programming, use the Page Program command (02h).
   • Wait for the specified Page Program Time (TPW) before initiating another operation.

5. Erase Operations:

   • Use the Sector Erase command (20h) or Bulk Erase command (60h) as required.
   • Ensure no other operations are initiated until the erase cycle completes, which can take up to 300ms.

6. Standby Mode:

   • Enter standby mode using the Deep Power Down command (B9h) to reduce power consumption.
   • To exit, use the Release from Deep Power Down command (ABh).

7. Temperature Considerations:

   • Operate within the temperature range of -40掳C to +85掳C for reliable performance.
   • Store the device between -40掳C and +125掳C.

8. Data Retention:

   • Ensure the device is stored and operated under recommended conditions to maintain data retention for at least 20 years.

(For reference only)