Details

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BUY 2SK1530 K1530 https://www.utsource.net/itm/p/8648248.html

Parameter	Symbol	Value	Unit
Drain-Source Voltage	V(DS)	450	V
Gate-Source Voltage	V(GS)	卤20	V
Continuous Drain Current	I(D)	12	A
Pulse Drain Current	I(DM)	36	A
Power Dissipation	P(TOT)	225	W
Junction Temperature	T(J)	-55 to +175	掳C
Storage Temperature	T(STG)	-55 to +150	掳C
Thermal Resistance (Junction to Case)	R(胃JC)	1.2	掳C/W

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the device to temperatures outside the specified operating range.
   • Handle with care to avoid mechanical damage, especially to the leads and case.

2. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
   • Use thermal compound between the device and the heat sink to improve thermal conductivity.

3. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Ensure that the gate-source voltage does not exceed the maximum rating of 卤20V to prevent damage to the device.

4. Operating Conditions:

   • Operate the device within the continuous drain current (I(D)) and power dissipation (P(TOT)) ratings to ensure reliable performance.
   • For pulse applications, ensure that the pulse drain current (I(DM)) does not exceed 36A.

5. Storage:

   • Store the device in a dry, cool place within the storage temperature range (-55掳C to +150掳C).

6. Testing:

   • Use appropriate test equipment and methods to verify the device parameters before installation.
   • Follow standard testing procedures to avoid damaging the device during testing.

7. Safety:

   • Always follow safety guidelines when handling high-voltage and high-current circuits.
   • Use protective equipment such as gloves and goggles when necessary.

By adhering to these instructions, you can ensure optimal performance and longevity of the 2SK1530 K1530 MOSFET.

(For reference only)