17N80C3 【TO-3P】

17N80C3 【TO-3P】

Category: Transistors

Specifications
SKU
8648300
Details

BUY 17N80C3 【TO-3P】 https://www.utsource.net/itm/p/8648300.html

Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage Vceo - - 80 V
Collector-Base Voltage Vcbo - - 80 V
Emitter-Base Voltage Vebo - - 5 V
Continuous Collector Current Ic - 17 - A
Power Dissipation (Tc=25°C) Ptot - - 130 W
Power Dissipation (Tc=100°C) Ptot - - 90 W
Junction Temperature Tj - - 150 °C
Storage Temperature Tstg -65 - 150 °C
Thermal Resistance, Junction to Case Rthjc - 0.5 - °C/W

Instructions for Use

  1. Mounting:

    • Ensure that the device is securely mounted to a heat sink to manage thermal dissipation effectively.
    • Use thermal compound between the device and the heat sink to improve thermal conductivity.
  2. Electrical Connections:

    • Connect the collector (C) to the positive supply or load.
    • Connect the emitter (E) to the ground or return path.
    • Connect the base (B) to the control circuitry.
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Ensure that the junction temperature (Tj) does not exceed 150°C.
    • Operate within the specified storage temperature range (-65°C to 150°C).
  4. Handling:

    • Handle the device with care to avoid mechanical damage.
    • Use proper ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.
  5. Testing:

    • Before installation, verify the device parameters using appropriate test equipment.
    • Ensure that the device is properly biased and operates within its safe operating area (SOA).
  6. Storage:

    • Store the device in a dry, cool place to prevent moisture damage.
    • Keep the device in its original packaging until ready for use.
  7. Soldering:

    • Use a controlled soldering process to avoid overheating the device.
    • Follow recommended soldering profiles to ensure reliable connections without damaging the device.
(For reference only)

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