Details

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BUY TM4E1G31H6ZRBI https://www.utsource.net/itm/p/8656756.html

Parameter	Description	Value	Unit
Part Number	Full part number	TM4E1G31H6ZRBI
Type	Device type	DDR4 SDRAM
Capacity	Storage capacity	1 Gb
Organization	Memory organization	x32
Voltage (Vdd)	Supply voltage	1.2 V	Volts
Speed	Data rate	3200 MT/s	Megatransfers/second
CAS Latency	Column Address Strobe latency	22, 24
Operating Temp.	Operating temperature range	-40 to +85	掳C
Package	Package type	BGA
Pin Count	Number of pins	78
ECC	Error Correction Code	No
Refresh	Refresh mode	Auto-refresh

Instructions for Use:

1. Power Supply Requirements:

   • Ensure the supply voltage (Vdd) is set to 1.2V. Incorrect voltage can damage the device.

2. Signal Integrity:

   • Maintain proper signal integrity by using controlled impedance traces and ensuring adequate bypass capacitors are placed close to the power pins.

3. Initialization:

   • Follow the initialization sequence as specified in the JEDEC DDR4 standard. This includes setting up the memory controller with correct timing parameters like CAS latency.

4. Operating Temperature:

   • Operate the device within the specified temperature range (-40掳C to +85掳C). Exceeding these limits can lead to unreliable operation or failure.

5. Handling:

   • Handle the component with care to avoid ESD damage. Use appropriate anti-static measures when handling or installing the component.

6. Mounting:

   • Mount the component on a PCB designed for BGA packages with a 78-pin configuration. Ensure the PCB design matches the pinout of the TM4E1G31H6ZRBI.

7. Testing:

   • After installation, thoroughly test the memory to ensure it operates correctly under all conditions, including stress testing at the boundaries of operating parameters.

(For reference only)