Details

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BUY IKW50N60H3 K50H603 https://www.utsource.net/itm/p/8656811.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCES	-	-	600	V
Collector Current	IC	-	-	50	A	Tc = 25°C
Collector Dissipation Power	PC	-	-	1.8	kW	Tc = 25°C, Forced Air Cooling
Junction Temperature	TJ	-	-	175	°C
Storage Temperature	TSTG	-55	-	150	°C
Gate Threshold Voltage	VGE(th)	4.0	-	6.0	V	IC = 1 A, dIC/dt = 100 A/μs
Turn-On Time	ton	-	100	-	ns	IG = 10 A, IC = 30 A
Turn-Off Time	toff	-	90	-	ns	IG = -4 A, IC = 30 A

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to maintain junction temperature within limits.
   • Handle with care to avoid damage to the gate terminal.

2. Operation:

   • Operate within specified voltage and current ratings to prevent device failure.
   • Ensure adequate cooling (forced air or heatsink) to manage power dissipation.

3. Gate Drive:

   • Apply gate drive signals carefully to avoid exceeding gate threshold voltage limits.
   • Ensure fast switching transitions to minimize switching losses.

4. Storage:

   • Store in a controlled environment within the storage temperature range to prevent degradation.

5. Testing:

   • Test under controlled conditions to ensure parameters meet specifications.
   • Verify all connections are secure and correct before applying power.

(For reference only)