MBRF20200D

MBRF20200D

Category: Transistors

Specifications
Details

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Parameter Symbol Conditions Min Typ Max Unit
Average Rectified Current IF(AV) Tj = 145°C, Rf = 10 mΩ - 2.0 - A
Peak Forward Surge Current Ifsm Tj = 25°C, 8.3 ms - 60 - A
Maximum RMS Voltage VRMS - - 200 - V
Maximum Repetitive Peak Reverse Voltage VRRM - - 200 - V
Forward Voltage VF IF = 1.0A, Tj = 25°C - 1.1 - V
Junction Temperature Tj - - - 150 °C
Storage Temperature Tstg - -55 - 150 °C

Instructions for MBRF20200D:

  1. Handling and Storage:

    • Store in a dry environment within the temperature range specified by Tstg.
    • Handle with care to avoid damage to leads and body.
  2. Mounting:

    • Ensure proper heat sinking if operating near maximum current ratings to maintain junction temperature below 150°C.
    • Avoid excessive bending of the leads to prevent mechanical stress.
  3. Electrical Connections:

    • Connect the diode in accordance with its polarity markings.
    • Ensure that the applied voltage does not exceed the maximum repetitive peak reverse voltage (VRRM).
  4. Surge Current Considerations:

    • For applications involving surge currents, ensure that the peak forward surge current (Ifsm) does not exceed 60A for more than 8.3 ms at 25°C junction temperature.
  5. Operating Temperature:

    • Monitor the junction temperature (Tj) to stay within operational limits, especially under high current conditions.
  6. Testing:

    • Verify parameters such as forward voltage (VF) and rectified current (IF(AV)) during testing to ensure the device is functioning within specifications.
(For reference only)

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