Details

---

BUY K3115B https://www.utsource.net/itm/p/8663078.html

Parameter	Description
Part Number	K3115B
Type	Silicon Epitaxial Planar Transistor
Polarity	NPN
Collector-Emitter Voltage (VCEO)	80 V
Emitter-Collector Voltage (VEBO)	6 V
Collector Current (IC)	1.5 A
Power Dissipation (Ptot)	125 mW at 25°C
Operating Temperature Range	-55°C to +150°C
Storage Temperature Range	-65°C to +175°C
Package Type	TO-92

Instructions for Use:

1. Handling Precautions: Handle the K3115B with care to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection equipment.
2. Mounting: Ensure proper mounting on a PCB to maintain thermal performance and reliability. Follow manufacturer guidelines for soldering temperature and time.
3. Biasing: Apply correct biasing conditions to ensure the transistor operates within safe limits. Avoid exceeding maximum ratings for voltage and current.
4. Testing: Before operational deployment, test the device under specified conditions to confirm it meets performance requirements.
5. Storage: Store in a dry environment within the recommended temperature range to prevent degradation of performance characteristics.

(For reference only)