TK12A60U  K12A60U  TO-220F

TK12A60U K12A60U TO-220F

Category: Transistors

Specifications
Details

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Parameter TK12A60U / K12A60U TO-220F
Type Thyristor
Package TO-220F
Maximum Repetitive Peak Off-State Voltage (V DRM ) 600 V
Maximum RMS On-State Current (I T(RMS) ) 12 A
Maximum Non-Repetitive Surge Current (I SM ) 360 A
Gate Trigger Current (I GT ) 5 mA
Holding Current (I H ) 15 mA
Power Dissipation (P D ) 117 W
Operating Junction Temperature Range (T J ) -40°C to +125°C
Storage Temperature Range (T STG ) -55°C to +150°C

Instructions for Use:

  1. Mounting: Ensure the device is securely mounted on a heatsink if continuous operation at high currents is anticipated.
  2. Voltage Handling: Do not exceed the maximum repetitive peak off-state voltage (V DRM ). Verify that the circuit design accommodates transient voltage spikes.
  3. Current Limitations: Stay within the specified maximum RMS on-state current and non-repetitive surge current limits to prevent damage.
  4. Triggering: The gate trigger current must be sufficient to ensure reliable triggering of the thyristor. Avoid excessive gate current which can cause damage.
  5. Temperature Management: Monitor the operating junction temperature. Ensure adequate cooling to keep temperatures within the specified range.
  6. Storage Conditions: Store in a dry environment within the specified storage temperature range to prevent degradation.
  7. Handling Precautions: Handle with care to avoid mechanical damage, especially to the leads and body of the component.
(For reference only)

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