CM200DU-24FA

CM200DU-24FA

Category: Modules

Specifications
Details

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Parameter Description
Part Number CM200DU-24FA
Type IGBT (Insulated Gate Bipolar Transistor)
Collector-Emitter Voltage (Vce) 650 V
Collector Current (Ic) 200 A continuous, 800 A non-repetitive peak
Gate-Emitter Voltage (Vge) ±20 V
Power Dissipation (Ptot) 320 W
Thermal Resistance (Rth,j-c) 0.17 K/W
Switching Frequency Suitable for frequencies up to 20 kHz
Operating Temperature Range -40°C to +150°C
Package Type D2PAK (TO-263)
Features Low saturation voltage, fast switching speed
Applications Motor drives, power supplies, UPS systems

Instructions:

  1. Installation:

    • Ensure the heatsink is properly attached to dissipate heat effectively.
    • Use recommended torque values for mounting screws to avoid damage.
  2. Handling Precautions:

    • Handle with care to prevent electrostatic discharge (ESD).
    • Avoid exposing the device to environments exceeding the specified temperature range.
  3. Operation:

    • Operate within the specified voltage and current limits to ensure reliable performance.
    • Ensure proper gate drive circuitry to achieve optimal switching characteristics.
  4. Storage:

    • Store in a dry environment away from direct sunlight and extreme temperatures.
    • Keep components in anti-static packaging until ready for use.
  5. Troubleshooting:

    • If experiencing overheating or excessive power dissipation, check cooling solutions and operating parameters.
    • Verify correct installation and connections to eliminate potential issues.
(For reference only)

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