Details

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BUY SKKH42/18E https://www.utsource.net/itm/p/8801005.html

Parameter	Description	Value	Unit
Part Number	Full part identification	SKKH42/18E	-
Type	Device type	MOSFET	-
Configuration	Channel type	N-Channel	-
Drain Source Voltage	Maximum drain-source voltage	60	V
Continuous Drain Current	Continuous drain current at Ta=25°C	18	A
Pulse Drain Current	Peak pulse drain current	54	A
Gate Source Voltage	Maximum gate-source voltage	±20	V
Total Power Dissipation	Power dissipation at Tc=25°C	180	W
Junction Temperature	Maximum junction temperature	175	°C
Storage Temperature	Operating temperature range	-55 to 175	°C

Instructions for Use:

1. Installation: Ensure that the device is handled with care to avoid damage to the leads and body. Use appropriate anti-static precautions.
2. Mounting: Mount the device on a heatsink if operating near maximum power dissipation limits. Ensure proper thermal interface materials are used between the device and heatsink.
3. Wiring: Connect the source, drain, and gate terminals as per your circuit requirements. Avoid excessive lead length to reduce inductive effects.
4. Operating Conditions: Do not exceed the maximum ratings listed in the table. Ensure the ambient temperature does not exceed the specified limits.
5. Testing: Before full-scale operation, test the device under controlled conditions to ensure it meets the required specifications.
6. Storage: Store in a dry, cool place away from direct sunlight and sources of heat. Follow ESD (Electrostatic Discharge) guidelines during storage and handling.

(For reference only)