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BUY FB30R06W1E3 https://www.utsource.net/itm/p/8809232.html
Insulated Gate Bipolar Transistor, 39A I(C), 600V V(BR)CES, N-Channel, MODULE-23
The FB30R06W1E3 is a N-channel MOSFET manufactured by Infineon Technologies AG. It is designed for use in power switching applications, such as DC/DC converters, motor drives, and other power management applications. The device features a low on-resistance of 0.6 ohms and a low gate charge of 5.6 nC. It also has a maximum drain-source voltage of 30 V and a maximum drain current of 30 A. The device is RoHS compliant and is available in a TO-220 package. (For reference only)