Details

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BUY FP10R06KL4_B3 https://www.utsource.net/itm/p/8809461.html

Parameter	Description	Value	Unit
Part Number	Full part number	FP10R06KL4_B3	-
Type	Device type	MOSFET	-
Technology	Process technology	Trench	-
Package	Package type	TO-220FP	-
VDS (Max)	Drain-source voltage	600	V
RDS(on) (Max)	On-state resistance	0.058	Ω
ID (Max)	Continuous drain current	10	A
PD (Max)	Power dissipation	75	W
TJ (Max)	Junction temperature	175	°C
Qg (Total)	Total gate charge	29	nC
VGS(th) (Min)	Gate threshold voltage	2.0	V
VGS(th) (Typ)	Gate threshold voltage	2.8	V
VGS(th) (Max)	Gate threshold voltage	4.0	V
EAS (Max)	Avalanche energy	1.1	J

Instructions for Use:

1. Handling Precautions:

   • Handle the device with care to avoid damage from electrostatic discharge (ESD). Use proper ESD protection equipment.

2. Mounting:

   • Ensure that the mounting surface is clean and flat. Apply thermal paste if necessary for better heat dissipation.

3. Soldering:

   • Solder within the recommended temperature range and time to prevent damage to the device. Maximum soldering temperature: 260°C for 10 seconds.

4. Storage:

   • Store in a dry environment away from direct sunlight and sources of heat.

5. Operating Conditions:

   • Operate within specified electrical and thermal limits to ensure reliable performance and longevity.

6. Testing:

   • Before installing, verify the device parameters using appropriate testing equipment to ensure it meets the specifications.

7. Applications:

   • Suitable for use in power supplies, motor control, and general-purpose switching applications where high efficiency and reliability are required.

(For reference only)