Details

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BUY FP10R06W1E3 https://www.utsource.net/itm/p/8809462.html
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23

Parameter	Symbol	Value	Unit	Test Conditions
Maximum Drain-to-Source Voltage	VDS(max)	60	V	-
Maximum Gate-to-Source Voltage	VGS(max)	±20	V	-
Continuous Drain Current	ID	10	A	TC = 25°C
Pulse Drain Current	IDpeak	40	A	TC = 25°C, tp = 10 μs, Duty Cycle = 1%
Total Power Dissipation	PTOT	100	W	TC = 25°C
Junction Temperature Range	TJ	-55 to 150	°C	-
Storage Temperature Range	TSTG	-55 to 150	°C	-
Thermal Resistance, Junction to Case	RθJC	1.5	°C/W	-
Gate Charge	QG	35	nC	VGS = 10V, ID = 10A
Input Capacitance	Ciss	1800	pF	VDS = 15V, f = 1 MHz
Output Capacitance	Coss	270	pF	VDS = 15V, f = 1 MHz
Reverse Transfer Capacitance	Crss	450	pF	VDS = 15V, f = 1 MHz
On-State Resistance	RDS(on)	0.06	Ω	VGS = 10V, ID = 10A
Turn-On Delay Time	td(on)	12	ns	VGS = 10V, ID = 10A
Rise Time	tr	28	ns	VGS = 10V, ID = 10A
Turn-Off Delay Time	td(off)	18	ns	VGS = 10V, ID = 10A
Fall Time	tf	35	ns	VGS = 10V, ID = 10A

Instructions for Use:

1. Mounting and Handling:

   • Handle the device with care to avoid damage to the leads and body.
   • Ensure proper heat sinking to maintain the junction temperature within the specified range.

2. Electrical Connections:

   • Connect the drain (D), gate (G), and source (S) terminals correctly.
   • Use short, low-inductance connections to minimize parasitic effects.

3. Biasing:

   • Apply the appropriate gate-to-source voltage (V_GS) to control the device.
   • Ensure that the gate voltage does not exceed the maximum ratings.

4. Thermal Management:

   • Ensure adequate cooling to keep the junction temperature below 150°C.
   • Use thermal paste or thermal interface materials between the device and the heat sink for better thermal conductivity.

5. Operational Limits:

   • Do not exceed the maximum drain-to-source voltage (V_DS(max)).
   • Stay within the continuous and pulse drain current limits.
   • Avoid operating the device outside its specified temperature range.

6. Testing and Troubleshooting:

   • Use a high-impedance voltmeter to measure gate and drain voltages.
   • Check for proper connection and thermal management if the device overheats.
   • Verify the on-state resistance (R_DS(on)) to ensure the device is functioning correctly.

7. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Keep the device in its original packaging until ready for use.

(For reference only)