FS25R12KE3G

FS25R12KE3G

Category: Modules

Specifications
SKU
8809529
Details

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Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MODULE-28
The FS25R12KE3G is a three-phase insulated-gate bipolar transistor (IGBT) module from Eupec GmbH & Co Kg. It is designed for use in high-power applications, such as motor drives, welding, UPS, and solar inverters. It features a maximum collector emitter voltage of 1200V, a maximum collector current of 25A, and a maximum junction temperature of 150°C. The module is designed to provide high efficiency, low switching losses, and low EMI. It is also designed to be robust and reliable, with a long lifetime. (For reference only)

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