IXSN80N60BD1

IXSN80N60BD1

Category: Modules

Specifications
Details

BUY IXSN80N60BD1 https://www.utsource.net/itm/p/8809854.html

Parameter Symbol Min Typ Max Unit Description
Drain-Source Voltage V(DS) - - 600 V Maximum drain-source voltage
Gate-Source Voltage V(GS) -20 - 20 V Maximum gate-source voltage
Continuous Drain Current I(D) - 80 - A Continuous drain current at Tc = 25°C
Pulse Drain Current I(D pul) - 160 - A Pulse drain current (t(p)=10μs, I(GS)=10A)
Power Dissipation P(TOT) - - 340 W Total power dissipation (TC=25°C)
Junction Temperature T(J) - - 175 °C Maximum junction temperature
Storage Temperature T(STG) -55 - 175 °C Operating temperature range for storage

Instructions:

  1. Handling Precautions:

    • Avoid exceeding the maximum ratings to prevent damage.
    • Use appropriate heat sinks when operating at high currents or powers.
  2. Installation:

    • Ensure proper mounting to maintain thermal performance.
    • Follow manufacturer guidelines for torque specifications on screws if applicable.
  3. Operating Conditions:

    • Operate within specified temperature ranges to ensure reliability.
    • Monitor the junction temperature especially under continuous load conditions.
  4. Electrical Characteristics:

    • Refer to the datasheet for detailed electrical characteristics and typical performance graphs.
    • Pay attention to the switching characteristics and timing parameters for optimal circuit design.
  5. Safety:

    • Handle with care to avoid static damage.
    • Ensure all connections are secure and insulated as necessary.

For more detailed information, refer to the official datasheet provided by IXYS Corporation.

(For reference only)

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