Details

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BUY STGD6NC60H https://www.utsource.net/itm/p/8810250.html

Parameter	Symbol	Min	Typical	Max	Unit	Description
Breakdown Voltage	V(BR)DSS	-	600	-	V	Drain-to-Source Breakdown Voltage (at ID = 250 μA, Tj = 25°C)
Continuous Drain Current	ID	-	6	-	A	Continuous Drain Current (Tc = 25°C)
Continuous Drain Current	ID(TC)	-	4	-	A	Continuous Drain Current (Tc = 100°C)
Pulse Drain Current	IDM	-	36	-	A	Pulse Drain Current (t = 10 ms, Tj = 25°C)
Gate Threshold Voltage	VGS(th)	2	4	6	V	Gate Threshold Voltage (ID = 250 μA, Tj = 25°C)
On-State Resistance	RDS(on)	-	0.065	-	Ω	On-State Resistance (VGS = 10 V, ID = 6 A, Tj = 25°C)
Input Capacitance	Ciss	-	1750	-	pF	Input Capacitance (VDS = 0 V, f = 1 MHz)
Output Capacitance	Coss	-	380	-	pF	Output Capacitance (VDS = 0 V, f = 1 MHz)
Reverse Transfer Capacitance	Crss	-	1370	-	pF	Reverse Transfer Capacitance (VDS = 0 V, f = 1 MHz)
Total Gate Charge	Qg	-	95	-	nC	Total Gate Charge (VGS = 15 V, VDS = 400 V, ID = 6 A)
Gate-to-Source Charge	Qgs	-	27	-	nC	Gate-to-Source Charge (VGS = 15 V, VDS = 400 V, ID = 6 A)
Gate-to-Drain Charge	Qgd	-	68	-	nC	Gate-to-Drain Charge (VGS = 15 V, VDS = 400 V, ID = 6 A)
Switching Energy	Eoss	-	1.1	-	μJ	Output Capacitance Energy (VDS = 400 V, ID = 6 A)
Switching Energy	Eon	-	0.5	-	μJ	Turn-On Energy (VGS = 15 V, VDS = 400 V, ID = 6 A)
Switching Energy	Eoff	-	0.6	-	μJ	Turn-Off Energy (VGS = 15 V, VDS = 400 V, ID = 6 A)
Junction Temperature	Tj	-	-	175	°C	Maximum Junction Temperature
Storage Temperature	Tstg	-55	-	150	°C	Operating and Storage Temperature Range

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper handling to avoid damage to the device.
   • Use appropriate heat sinks or cooling methods to manage the junction temperature, especially during high current operations.

2. Electrical Connections:

   • Connect the drain, source, and gate terminals correctly to avoid short circuits or incorrect operation.
   • Use short and direct connections to minimize parasitic inductance and capacitance.

3. Gate Drive:

   • Apply a gate voltage (VGS) within the specified range to ensure reliable turn-on and turn-off.
   • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).

4. Thermal Management:

   • Monitor the junction temperature to prevent overheating.
   • Use thermal paste and heatsinks to improve heat dissipation.

5. Overvoltage Protection:

   • Implement overvoltage protection circuits to safeguard against transient voltages exceeding the breakdown voltage.

6. Storage and Transportation:

   • Store the device in a dry and cool environment to prevent moisture damage.
   • Handle with care during transportation to avoid mechanical stress.

7. Safety Precautions:

   • Follow all safety guidelines and regulations when working with high voltages and currents.
   • Use appropriate personal protective equipment (PPE) when handling the device.

For detailed application notes and further information, refer to the datasheet provided by STMicroelectronics.

(For reference only)