Details

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BUY JCS4N60FB https://www.utsource.net/itm/p/8847843.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDS	-	600	-	V	Maximum voltage between drain and source with gate open
Gate-Source Voltage	VGS	-20	-	20	V	Maximum voltage between gate and source
Continuous Drain Current	ID	-	4	-	A	Maximum continuous drain current at TC = 25°C
Pulse Drain Current	IDm	-	12	-	A	Maximum pulse drain current (tp ≤ 10 μs)
Power Dissipation	PTOT	-	120	-	W	Maximum total power dissipation at TC = 25°C
Junction Temperature	TJ	-	-	175	°C	Maximum junction temperature
Storage Temperature	TSTG	-55	-	150	°C	Operating temperature range for storage
Thermal Resistance	RθJC	-	1.5	-	°C/W	Junction-to-case thermal resistance

Instructions:

1. Handling Precautions:

   • Handle the JCS4N60FB with care to avoid damage to the leads or the body.
   • Use proper ESD (Electrostatic Discharge) protection when handling to prevent damage from static electricity.

2. Mounting:

   • Ensure that the device is mounted on a heatsink if operating at high power levels to maintain the junction temperature within safe limits.
   • Follow the recommended soldering profile to avoid thermal shock and ensure reliable connections.

3. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table to prevent damage to the device.
   • Ensure that the gate-source voltage (V_GS) is within the specified range to avoid gate oxide breakdown.

4. Testing:

   • Use appropriate test equipment and methods to verify the performance of the device.
   • Test the device under controlled conditions to ensure accurate results.

5. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Keep the device in its original packaging until ready for use to protect against physical damage and contamination.

(For reference only)