1S1830(Q)

1S1830(Q)

Category: Transistors

Specifications
Details

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Parameter Symbol Conditions Min Typ Max Unit
Breakdown Voltage V(BR) IC = 5mA 30 45 V
Leakage Current IR VR = 1/8 V(BR) 1 μA
Capacitance Cj VR = 0V, f = 1MHz 8 12 pF
Power Dissipation Ptot 100 mW

Instructions for Using 1S1830(Q):

  1. Mounting and Handling:

    • Handle the device with care to avoid damage to the leads and body.
    • Ensure proper alignment during mounting to prevent short circuits.
  2. Operating Conditions:

    • Do not exceed the maximum ratings specified in the table to avoid damage.
    • Operate within the temperature range specified by the manufacturer.
  3. Testing:

    • Use appropriate test equipment that can provide stable current and voltage levels.
    • During testing, ensure that the leakage current is measured under the specified reverse voltage condition.
  4. Storage:

    • Store in a dry, cool place away from direct sunlight and corrosive substances.
    • Follow anti-static precautions to protect the device from ESD damage.
  5. Application Considerations:

    • This diode is suitable for applications requiring protection against transient voltages.
    • It can be used in circuits where precise voltage regulation or clamping is needed.
  6. Safety Precautions:

    • Always follow safety guidelines when handling electronic components.
    • Avoid exposing the component to excessive heat or mechanical stress.
(For reference only)

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