Details

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BUY AOD452 D452 https://www.utsource.net/itm/p/8847863.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source On-Resistance	RDS(on)	-	0.12	-	Ω	At VGS = 4.5V, ID = 4A
Gate-Source Voltage	VGS(th)	0.8	1.6	2.5	V	Gate threshold voltage
Continuous Drain Current	ID	-	-	6.7	A	At VGS = 10V, TJ = 25°C
Power Dissipation	PD	-	-	1.1	W	At TC = 25°C
Junction Temperature	TJ	-55	-	150	°C	Operating junction temperature range

Instructions for Use:

1. Handling Precautions: The AOD452 D452 is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection measures.
2. Mounting: Ensure proper mounting and alignment on the PCB to maintain thermal performance and electrical connections.
3. Heat Sinking: For applications requiring high current or continuous operation, consider using a heat sink to manage heat dissipation effectively.
4. Voltage Limits: Do not exceed the maximum ratings provided in the table to avoid damage to the device.
5. Gate Drive: Apply sufficient gate voltage to ensure the MOSFET operates within its specified RDS(on) parameters, enhancing efficiency and reducing power loss.
6. Storage Conditions: Store in a dry environment and follow the recommended storage conditions to prevent degradation of device characteristics.

(For reference only)