G50T60 IKW50N60T IGBT 50A 600V TO247

G50T60 IKW50N60T IGBT 50A 600V TO247

Category: Transistors

Specifications
Details

BUY G50T60 IKW50N60T IGBT 50A 600V TO247 https://www.utsource.net/itm/p/8853197.html

Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage VCES - - 600 V IC = 0, IT = 25°C
Gate-Emitter Voltage VGE -15 - 20 V
Continuous Collector Current IC - 50 - A Tc = 25°C
Pulse Collector Current ICM - 100 - A tp = 10ms, Tc = 25°C
Power Dissipation PD - - 278 W Tc = 25°C
Junction Temperature TJ - - 150 °C
Storage Temperature TSTG -55 - 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper mounting to a heat sink to maintain the junction temperature within specified limits.
    • Handle with care to avoid damage to the TO-247 package.
  2. Electrical Connections:

    • Connect the collector (C), emitter (E), and gate (G) terminals correctly.
    • Ensure all connections are secure and insulated appropriately to prevent short circuits.
  3. Operating Conditions:

    • Do not exceed the maximum ratings for voltage, current, and temperature.
    • Operate within the safe operating area (SOA) defined in the datasheet.
  4. Gate Drive Requirements:

    • Apply appropriate gate-emitter voltage to ensure reliable turn-on and turn-off of the IGBT.
    • Use suitable gate resistors to control switching speed and reduce EMI.
  5. Thermal Management:

    • Monitor the junction temperature and use adequate cooling methods such as forced air or liquid cooling if necessary.
    • Ensure thermal resistance between the device and the heat sink is minimized.
  6. Storage and Packaging:

    • Store in a dry, cool place away from direct sunlight.
    • Follow anti-static precautions when handling to prevent damage from ESD.
(For reference only)

View more about G50T60 IKW50N60T IGBT 50A 600V TO247 on main site