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BUY G50T60 IKW50N60T IGBT 50A 600V TO247 https://www.utsource.net/itm/p/8853197.html
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCES | - | - | 600 | V | IC = 0, IT = 25°C |
Gate-Emitter Voltage | VGE | -15 | - | 20 | V | |
Continuous Collector Current | IC | - | 50 | - | A | Tc = 25°C |
Pulse Collector Current | ICM | - | 100 | - | A | tp = 10ms, Tc = 25°C |
Power Dissipation | PD | - | - | 278 | W | Tc = 25°C |
Junction Temperature | TJ | - | - | 150 | °C | |
Storage Temperature | TSTG | -55 | - | 150 | °C |
Instructions for Use:
Mounting and Handling:
- Ensure proper mounting to a heat sink to maintain the junction temperature within specified limits.
- Handle with care to avoid damage to the TO-247 package.
Electrical Connections:
- Connect the collector (C), emitter (E), and gate (G) terminals correctly.
- Ensure all connections are secure and insulated appropriately to prevent short circuits.
Operating Conditions:
- Do not exceed the maximum ratings for voltage, current, and temperature.
- Operate within the safe operating area (SOA) defined in the datasheet.
Gate Drive Requirements:
- Apply appropriate gate-emitter voltage to ensure reliable turn-on and turn-off of the IGBT.
- Use suitable gate resistors to control switching speed and reduce EMI.
Thermal Management:
- Monitor the junction temperature and use adequate cooling methods such as forced air or liquid cooling if necessary.
- Ensure thermal resistance between the device and the heat sink is minimized.
Storage and Packaging:
- Store in a dry, cool place away from direct sunlight.
- Follow anti-static precautions when handling to prevent damage from ESD.
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