Details

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BUY MMBT589LT1G https://www.utsource.net/itm/p/8853221.html

Parameter	Value	Unit
Type	NPN Transistor	-
Collector-Emitter Voltage (Vce)	30	V
Collector-Base Voltage (Vcb)	45	V
Emitter-Base Voltage (Veb)	6	V
Collector Current (Ic)	200	mA
Power Dissipation (Ptot)	625	mW
DC Current Gain (hFE)	100 to 300	-
Transition Frequency (ft)	300	MHz
Storage Temperature Range (Tstg)	-65 to +150	掳C
Operating Temperature Range (Tamb)	-65 to +150	掳C
Package Type	SOT-23	-

Instructions for Use:

1. Handling:

   • Handle with care to avoid damage to the leads or the body.
   • Use proper ESD (Electrostatic Discharge) precautions to prevent damage.

2. Mounting:

   • Ensure the correct orientation of the transistor during mounting.
   • Apply gentle pressure when soldering to avoid excessive stress on the leads.
   • Use a temperature-controlled soldering iron and do not exceed 300掳C for more than 3 seconds per lead.

3. Soldering:

   • Pre-tin the leads and the PCB pads before soldering.
   • Allow the solder joints to cool naturally without movement.

4. Testing:

   • Test the transistor in a controlled environment to ensure it meets the specified parameters.
   • Use a multimeter or a transistor tester to verify the functionality.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready for use to protect against static and physical damage.

6. Applications:

   • Suitable for general-purpose switching and amplification applications.
   • Ideal for use in consumer electronics, automotive, and industrial control systems.

(For reference only)